Yongli Gao

Professor of Physics

 

1.             W.K. Lee, Y. Gao, and E.W. Prohofsky, "Structure of Hydrated Na ions around a Region of A- or B-DNA Helix," Biopolymers 23, 257 (1984).

2.             Y. Gao and E.W. Prohofsky, "A Modified Self-Consistent Phonon Theory of Hydrogen Bond Melting," J. Chem. Phys. 80, 2242 (1984).

3.             Y. Gao, K.V. Devi-Prased, and E.W. Prohofsky, "A Self-Consistent Microscopic Theory of Hydrogen Bond Melting with Application to poly(dG)*poly(dC)," J. Chem. Phys. 80, 6291 (1984).

4.             Y. Gao and R. Reifenberger, "A Design Innovation for the 127° Differential Electron Energy Analyzer," J. Phys. E 18, 381(1985).

5.             Y. Gao and R. Reifenberger, "Energy Resolved Photofield Emission from the W(100) Surface State," Phys. Rev. B 32, Rapid Comm., 1380 (1985).

6.             Y. Gao and R. Reifenberger, "Field Emission Energy Distribution Study of Laser Induced Thermal Effects on Metal Surfaces," J. Vac. Sci. Technol. A 4, 1289 (1986).

7.             Y. Gao and Reifenberger, "Photofield Emission from Transition Metal Surface States," Phys. Rev. B 35, 4284 (1987).

8.             Y. Gao and R. Reifenberger, "Band Structure Effects in Photofield Emission," Phys. Rev. B 35, 6627 (1987).

9.             Y. Gao and R. Reifenberger, "Yield of Photofield Emitted Electrons from Tungsten," Phys. Rev. B 35, 8301(1987).

10.         Y. Gao, B. Smandek, T.J. Wagener, J.H. Weaver, F. Levy, and G. Margaritondo, "Bremsstrahlung Isochromat Studies of Conduction Band States in SnS2 and SnSe2," Phys. Rev. B 35, Rapid Comm., 9357 (1987).

11.         Y. Gao, T.J. Wagener, D.M. Hill, H.M. Meyer III, J.H. Weaver, A.J. Arko, B. Flandermeyer, and D.W. Capone II, "High-Temperature Superconductors: Occupied and Unoccupied Electronic States, Surface Stability, and Interface Formation" in Chemistry of High-Temperature Superconductors, edited by D.L. Nelson, M.S. Whittingham, and T.F. George, 212 (American Chemical Society, Washington DC, 1987).

12.         Y. Gao, T.J. Wagener, J.H. Weaver, A.J. Arko, B. Flandermeyer, and D.W. Capone II, "Inverse Photoemission Studies of the Empty Electronic States and Surface Stability of La1.85Sr0.15CuO4," Phys. Rev. B 36, Rapid Comm., 3971(1987).

13.         J.H. Weaver, Y. Gao, T.J. Wagener, B. Flandermeyer, and D.W. Capone II, "Reaction and Disruption for Fe/La1.85Sr0.15CuO4: Interface Formation for High Temperature Superconductors," Phys. Rev B 36, Rapid Comm., 3975 (1987).

14.         T.J. Wagener, Y. Gao, J.H. Weaver, A.J. Arko, B. Flandermeyer, and D.W. Capone II, "Unoccupied Electronic States and Surface Phenomena for YBa2Cu3O6.9," Phys. Rev. B 36, 3899 (1987).

15.         Y. Gao, T.J. Wagener, J.H. Weaver, B. Flandermeyer, and D.W. Capone II, "Reaction and Intermixing at Metal-Superconductor Interfaces: Fe/YBa2Cu3O6.9," Applied Phys. Lett. 51, 1032 (1987).

16.         H.M. Meyer III, T.J. Wagener, D.M. Hill, Y. Gao, S.G. Anderson, S.D. Krahn, J.H. Weaver, B. Flandermeyer, and D.W. Capone II, "Spectroscopic Evidence for Passivation of the La1.85Sr0.15CuO4 Surface with Gold," Applied Phys. Lett. 51, 1118 (1987).

17.         Y. Gao, B. Smandek, M. Nikaido, J.H. Weaver, F. Levy, and G. Margaritondo, "Bremsstrahlung Isochromat Spectroscopy Studies of Conduction Band States in GaSe," Solid State Comm. 65, 11 (1988).

18.         Y. Gao, M. Grioni, B. Smandek, and J.H. Weaver, and T. Tyrie, "Inverse Photoemission Spectrometer for Interface Studies," J. Phys. E 21, 489 (1988).

19.         D.M. Hill, Y. Gao, H.M. Meyer III, T.J. Wagener, J.H. Weaver, and D.W. Capone II, "Cu-Induced Surface Disruption of La1.85Sr0.15CuO4," Phys. Rev. B 37, 511 (1988).

20.         Y. Gao, T.J. Wagener, J.H. Weaver, and D.W. Capone II, "Interface Formation of Semiconductors with High Tc Superconductors: Ge/La1.85Sr0.15CuO4," Phys. Rev. B 37, 515 (1988).

21.         B. Smandek, Y. Gao, T.J. Wagener, J.H. Weaver, F. Levy, and G. Margaritondo, "Bremsstrahlung Isochromat Study of the Layered Compounds InSe, TiSe2, SnSe2, SnS2, and Bi2Te3," Phys. Rev. B 37, 4196 (1988).

22.         Y. Gao, I.M. Vitomirov, C.M. Aldao, T.J. Wagener, J.J. Joyce, C. Capasso, J.H. Weaver, and D.W. Capone II, "Synchrotron Radiation Photoemission Studies of the Interface Formation between Metals and High Tc Superconductors: Al and In on YBa2Cu3O6.9," Phys. Rev. B 37, Rapid Comm., 3741 (1988).

23.         Y Gao, H.M. Meyer III, T.J. Wagener, D.M. Hill, S.G. Anderson, and J.H. Weaver "Interface Formation: High Temperature Superconductors with Noble Metals, Reactive Transition Metals, and Semiconductors," in Thick Film Processing and Characterization of High Temperature Superconductors, edited by J.M. Happer, R.J. Cotton, and L.C. Feldman, 358 (AIP proceedings of AVS Topical Conference on Thin Film Processing and Characterization of High-Temperature Superconductors, New York, 1988).

24.         H.M. Meyer III, Y. Gao, T.J. Wagener, D.M. Hill, S.G. Anderson, and J.H. Weaver, "High Temperature Superconductors: Occupied and Unoccupied Electronic States," in Thick Film Processing and Characterization of High Temperature Superconductors, edited by J.M. Happer, R.J. Cotton, and L.C. Feldman, 254 (AIP proceedings of AVS Topical Conference on Thin Film Processing and Characterization of High-Temperature Superconductors, New York, 1988).

25.         T.J. Wagener, Y. Gao, H.M. Meyer III, D.M. Hill, S.G. Anderson, and J.H. Weaver "Spectroscopic Examinations of the Surface Stability of High Temperature Superconductors," in Thick Film Processing and Characterization of High Temperature Superconductors, edited by J.M. Happer, R.J. Cotton, and L.C. Feldman, 368 (AIP proceedings of AVS Topical Conference on Thin Film Processing and Characterization of High-Temperature Superconductors, New York, 1988).

26.         Y. Gao, T.J. Wagener, C.M. Aldao, I.M. Vitomirov, J.H. Weaver, and D.W. Capone II, "Photoemission and Inverse Photoemission Studies of La Adatom Interactions with YBa2Cu3O6.9," J. Appl. Phys. 64, 1296 (1988).

27.         Y. Hu, T.J. Wagener, Y. Gao, and J.H. Weaver, "Empty Electronic States of Graphite and the Growth of Au and Pd Clusters," Phys. Rev. B 38, 3037 (1988).

28.         T.J. Wagener, Y. Gao, I.M. Vitomirov, C.M. Aldao, J.J. Joyce, J.H. Weaver, and C. Capone II, "Disruption, Segregation and Passivation for the Interfaces of Pd and Noble Metal Overlayers on YBa2Cu3O6.9," Phys. Rev. B 38, 232 (1988).

29.         J.H. Weaver, H.M. Meyer III, T.J. Wagener, D.M. Hill, Y.Gao, D. Peterson, Z. Fisk, and A.J. Arko, "Valence Bands, Oxygen in Planes and Chains, and Surface Changes for Single Crystals of M2CuO4 and MBa2Cu3Ox (M=Pr, Nd, Eu, Gd)," Phys. Rev. B 38, 4668 (1988).

30.         A. Franciosi, A. Wall, Y. Gao, J.H. Weaver, S. Chang, A. Raisanen, and B. Rehil, "Inverse Photoemission Studies of Ternary Semimagnetic Semiconductors: Where Have All the d-states Gone?" in Proc. 19th Int. Conf. on the Phys. of Semiconductors, edited by W. Zawaolzki and J.M. Langer, (DHN Limited, Warsaw, Poland, 1988).

31.         H.M. Meyer III, D.M. Hill, T.J. Wagener, Y. Gao, J.H. Weaver, D.W. Capone II, and K.C. Goretta, "Electronic Structures for the YBa2Cu3O6.9 Surface and its Modification by Sputtering and Adatoms of Ti and Cu," Phys. Rev. B 38, 6500 (1988).

32.         I.M. Vitomirov, C.M. Aldao, Zhangda Lin, Y. Gao, B.M. Trafas and J.H. Weaver, "Pd Overlayer Growth on InP(110), GaAs(110), and InSb(110): Comparisons of Anion Surface Segregation," Phys. Rev. B 38, 10776 (1988).

33.         Y. Hu, T.J. Wagener, Y. Gao, and J.H. Weaver, "Resonant Inverse Photoemission Involving Transition-metal Subshell Interactions," Phys. Rev. B 38, Rapid Comm. 12708 (1988).

34.         B.M. Trafas, I.M. Vitomirov, C.M. Aldao, Y. Gao, F. Xu, J.H. Weaver, and D.L. Panins, "Cr, Co, Pd, Au, and In Overlayers on PbS(100) Surfaces: Adatom Interactions and Interface Formation," Phys. Rev. B 39, 3265 (1989).

35.         A. Wall, A. Franciosi, Y. Gao, J.H. Weaver, M.-H. Tsai, J.D. Dow, and R.V. Kasowski, "Inverse Photoemission and Resonant Photoemission Characterization of Semimagnetic Semiconductors," J. Vac. Sci. Technol. A 7, 656 (1989).

36.         T.J. Wagener, Y. Hu, Y. Gao, M.B. Jost, J.H. Weaver, N.D. Spencer, and K.C. Goretta, "Resonance Inverse Photoemission of Bi2Ca1+xSr2-xCu2O8+y and YBa2Cu3O7-x, Unoccupied Oxygen States, and Plasmons," Phys. Rev. B 39, 2928 (1989).

37.         Y. Hu, T.J. Wagener, Y. Gao, and J.H. Weaver, "Empty Electronic State Evolution for Sc and Electron Dynamics at the 3p-3d Giant Dipole Resonance," Phys. Rev. B 39, 8162 (1989).

38.         G.D. Waddill, C.M. Aldao, I.M. Vitomirov, Y. Gao, and J.H. Weaver, "Temperature Effects on Schottky Barrier Formation for Au/InP(110)," J. Vac. Sci. Technol. A 7, 865 (1989).       

39.         A. Franciosi, A. Wall, Y. Gao, J.H. Weaver, M. H. Tsai, J.D. Dow, R.V. Kasowski, R. Reifenberger, and F. Pool, "d-states, Exchange Splitting, and Mn Electronic Configuration in Cd1-xMnxTe,'' Phys. Rev. B 40, Rapid Comm., 12009 (1989).

40.         Y. Gao, C.P. Lusignan, M.W. Ruckman, and M. Strongin, "Growth of Al Oxide Layers on GaAs(100) by Reaction with Condensed Molecular Oxygen," J. Appl. Phys. 67, 7148 (1990).

41.         Y. Gao and Jianming Cao, "Incident Beam Effects in Electron-stimulated Auger Electron Diffraction," Phys. Rev. B 43, 9692 (1991).

42.         A. Wall, Y. Gao, A. Raisanen, A. Franciosi, and J.R. Chelicowsky, "Electron Density of States of CdTe," Phys. Rev. B 43, 4988 (1991).

43.         E.A. Murphy, H.E. Elsayed-Ali, Ken T. Park, Jianming Cao, and Y. Gao, "Angle Resolved X-ray Photoemission Study of the Surface Disordering of Pb(100)," Phys. Rev. B 43, 12615 (1991).

44.         M.W. Ruckman, M. Strongin, Jianming Cao, Ken T. Park, Y. Gao, and G.W. Wicks, "White Beam Synchrotron Radiation Degradation of GaAs(100)," Appl. Phys. Lett. 59, 849 (1991).

45.         Ken T. Park, Jianming Cao, Y. Gao, G.W. Wicks, and M.W. Ruckman, "Growth of Al Nitride Layers on GaAs(100) by Reaction with Condensed Ammonia," J. Appl. Phys. 70, 2623 (1991).

46.         T. Balasubramanian, Jianming Cao, and Y. Gao, "X-ray Photoemission Spectroscopy Studies of Cesium and Oxygen on GaAs(100)," J. Vac. Sci. Technol. A 10, 3158 (1992).

47.         Y. Gao and Ken T. Park, "Medium Energy Electron Diffraction from Cu(100)," Phys. Rev. B 46, 1743 (1992).

48.         Y. Gao, Ken T. Park, and B.R. Hsieh, "X-ray Photoemission Investigations of the Interface Formation of Ca and Poly(p-phenylene vinylene)," J. Chem. Phys. 97, 6991 (1992).

49.         Ken T. Park and Y. Gao, "Cryogenic Growth of Al Nitride Layers on GaAs(110): X-ray Photoemission and Inverse Photoemission Spectroscopy Studies," Phys. Rev. B 47, 4491 (1993).

50.         E. Ettedgui, Ken T. Park, Jianming Cao, Y. Gao, and M.W. Ruckman, "Growth of a Cr Oxide Layer on GaAs(100) by Oxidation with Condensed Water," J. Appl. Phys. 73, 1781 (1993).

51.         E. Ettedgui, C. Peng, L. Tsybeskov, Y. Gao, P.M. Fauchet, H.A. Mizes, and G.E. Carver, "High Spatial Resolution Mapping of Porous Silicon," in Microcrystalline Semiconductor: Material Science and Devices, edited by P.M. Fauchet, C.C. Tsai, L.T. Canham, I. Shimizu, and Y. Aouagi, 173 (Materials Research Society, Pittsburgh, 1993).

52.         Bing R. Hsieh, Y. Gao, and Ken T. Park, "Characteristics of Metal-Poly(phenylene vinylene) Interfaces," in Electroluminescent Materials, Devices, and Large-Screen Displays, edited by E.M. Conwell, M. Stolka, and M.R. Miller, 195 (International Society for Optical Engineering, 1993).

53.         Y. Gao, Ken T. Park, and B.R Hsieh, "Interface Formation of Ca with Poly(p-phenylene vinylene)," J. Appl. Phys. 73, 7894 (1993).

54.         P.M. Fauchet, E. Ettedgui, A. Raisanen, L.J. Brillson, F. Seiferth, S.K. Kurinec, Y. Gao, C. Peng, and L. Tsybeskov, "Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?" Mat. Res. Soc. Symp. Proc. 298, 307 (1993).

55.         L. Tsybeskov, C. Peng, S.P. Duttagupta, E. Ettedgui, Y. Gao, P.M. Fauchet, and G.E. Carver, "Comparative Study of Light-Emitting Porous Silicon Anodized with Light Assistance and in the Dark," Mat. Res. Soc. Symp. Proc. 298, 271 (1993).

56.         E.A. Murphy, H.E. Elsayed-Ali, Ken T. Park, and Y. Gao, "Temperature-Dependent X-ray Photoelectron Diffraction of Pb(100): Experimental Results and the Single-Scattering Cluster Model," J. Vac. Sci. Technol. A11, 3106 (1993).

57.         E. Ettedgui, H. Razafitrimo, K.T. Park, Y. Gao, and B.R. Hsieh, "An XPS Study of Sample Preparation on Band Bending at the Interface of Al with Poly(p-phenylene vinylene)," J. Appl. Phys. 75, 7526 (1994).

58.         P.M. Fauchet, C. Peng, L. Tsybeskov, J. Vandyshev, A. Dubois, A. Raisanen, T.E. Orlowski, L.J. Brillson, J.E. Fouquet, S.L. Dexheimer, J.M. Rehm, G.L. Mclendon, E. Ettedgui, Y. Gao, F. Seiferth, and S.K. Kurinec, "Intense Room Temperature Light Emission in Porous Silicon: from Less than 450 nm to beyond 1.5 mm," in Advanced Photonics Materials for Information Technology, edited by S. Etemad, 34 (SPIE, 1994).

59.         C.A. Schmuttenmaer, M.A. Aeschlimann, J. Cao, H.E. Elsayed-Ali, R.J.D. Miller, D.A. Mantell, and Y. Gao, "Time Resolved Two Photon Photoemission from Cu(100): Energy Dependence of Electron Relaxation," Phys. Rev. B 50, Rapid Comm., 8957 (1994).

60.         C.A. Schmuttenmaer, M.A. Aeschlimann, J. Cao, H.E. Elsayed-Ali, R.J.D. Miller, D.A. Mantell, and Y. Gao, "Femtosecond Studies of Carrier Relaxation Processes at Single Crystal Metal Surfaces," Proc. SPIE 2125, 98 (1994).

61.         B.R. Hsieh, E. Ettedgui, K.T. Park, and Y. Gao, "The Surface Species of Poly(p-Phenylene-Vinylene) and Their Effects on Calcium Interface Formation," Mol. Cryst. Liq. Cryst. 256, 71 (1994).

62.         C.A. Schmuttenmaer, M. Aeschlimann, J. Cao, Y. Gao, D.A. Mantell, and R.J.D. Miller, "Femtosecond Photoemission Studies of Electron Relaxation at Cu Surfaces," Ultrafast Phenomena IX, A.H. Zewail, G. Mourou, W. Knox, and P.F. Barbara, Eds., 307 (Springer-Verlag, Berlin, 1994).

63.         H. Razafitrimo, K.T. Park, E. Ettedgui, Y. Gao, and B.R. Hsieh, "Interface Formation of Ca with Poly(p-phenylene vinylene)-Di-Phenyl and Poly(p-phenylene vinylene)-Phenyl," Polym. International 36, 147 (1995).

64.         E. Ettedgui, H. Razafitrimo, K.T. Park, Y. Gao, and B.R. Hsieh, "X-ray Photoemission Spectroscopy Study of Band Bending at the Interface of Metal with Poly(p-phenylene vinylene)," Surf. Interface Anal. 23, 89 (1995).

65.         M.A. Aeschlimann, E. Hull, J. Cao, C.A. Schmuttenmaer, L.G. Jahn, Y. Gao, H.E. Elsayed-Ali, D.A. Mantell, and M.R. Scheinfein, "A Picosecond Electron Gun for Surface Analysis," Rev. Nucl. Instrum. 66, 1000 (1995).

66.         Ken T. Park, Jianming Cao, E. Ettedgui, Y. Gao, and M.W. Ruckman, "Investigation of thin Cr Overlayer in Cr/NH3/GaAs(100) Using Synchrotron Radiation," J. Vac. Sci. Technol. A13, 200 (1995).

67.         E. Ettedgui, J. Cao, Ken T. Park, Y. Gao, and M.W. Ruckman, "Photo-assisted Oxidation of GaAs(100) with Condensed Water Using Synchrotron Photoemission Spectroscopy," J. Appl. Phys. 77, 5411 (1995).

68.         M.A. Aeschlimann, C.A. Schmuttenmaer, J. Cao, Y. Gao, H.E. Elsayed-Ali, R.J.D. Miller, and D.A. Mantell, "Observation of Surface Enhanced Multiphoton Photoemission from Metal Surfaces in the Short Pulse Limit," J. Chem. Phys. 102, 8606 (1995).

69.         P.M. Fauchet, C. Peng, L. Tsybeskov, Ju.V. Vandyshev, A. Dubois, L. McLoud, S.P. Duttagupta, J.M. Rehm, G.L. Mclendon, E. Ettedgui, Y. Gao, F. Seiferth, S.K. Kurinec, A. Raisanen, T.E. Orlowski, L.J. Brillson, and G.E. Carver, "Prospects for Light-Emitting Diodes Made of Porous Silicon from Blue to beyond 1.5 mm," Proc. SPIE 2144, 98 (1995).

70.         S.P. Duggagupta, L. Tsybeskov, P.M. Fauchet, E. Ettedgui, and Y. Gao, "Post-Anodization Implantation and CVD Techniques for Passibation of Porous Silicon," Microcrytals and Nanocryatalline Semiconductors, Mat. Res. Soc. Symp. Proc. 358, 381 (1995).

71.         H. Razafitrimo, E. Ettedgui, L.H. Guo, G.L. McLendon, and Y. Gao, "X-Ray Photoemission Study of the Interface Formation between Ca and Self-Assembled Thiol Monolayers," Appl. Phys. Lett. 67, 2621 (1995).

72.         E. Ettedgui, H. Razafitrimo, Y. Gao, and B.R. Hsieh, "Band Bending Modified Tunneling at Metal/Conjugated Polymer Interfaces," Appl. Phys. Lett. 67, 2705 (1995).

73.         B.R. Hsieh, H. Razafitrimo, Y. Gao, W. A. Feld, "Highly Phenylated Poly(p-phenylene vinylenes) (HP-PPVs) via The Chlorine Precursor Route (CPR): On the Photophysical Properties," Polym. Mater. Sci. Eng. 73, 557 (1995).

74.         B.R. Hsieh, H. Razafitrimo, Y. Gao, W. A. Feld, "Highly Phenylate Poly(p-phenylene vinylenes) (HP-PPVs) via The Chlorine Precursor Route," Polym. Preprints, 36(2), 85 (1995).

75.         Y. Park, E. Ettedgui, Y. Gao, B.R. Hsieh, K. Mullen, "Modeling Band Bending at Metal/PPV Interface Using a Phenylene Vinylene Oligomer," Polym. Preprints, 36(2), 382 (1995).

76.         M.A. Aeschlimann, E. Hull, C.A. Schmuttenmaer, J. Cao, Y. Gao, D.A. Mantell, and H.E. Elsayed-Ali, "Time-Resolved Electron Diffraction to Study Photoinduced Molecular Dynamics at Single Crystal Surfaces," Proc. SPIE 2521, 103 (1996).

77.         E. Ettedgui, H. Razafitrimo, Y. Gao, B.R. Hsieh, W.A. Feld, and M.W. Ruckman, "Evidence for the Formation of Unoccupied States in Poly(2,3-diphenyl phenylene vinylene) Following the Deposition of Metal," Phys. Rev. Lett. 76, 299 (1996).

78.         S. Xu, J. Cao, C. Miller, D.A. Mantell, R.J.D. Miller, and Y. Gao, "Energy Dependence of Electron Lifetime in Graphite Observed with Femtosecond Photoemission Spectroscopy," Phys. Rev. Lett. 76, 483 (1996).

79.         M.R. Robinson, H. Razafitrimo, Y. Gao, and B.R. Hsieh, "The Aging Behaviors of a Sulfonium Precursor Polymer of Poly(p-phenylene vinylene)," Polym. Mater. Sci. Eng. 74, 292 (1996).

80.         C.A. Schmuttenmaer, C.C. Miller, J.W. Herman, J. Cao, D.A. Mantell, Y. Gao, and R.J.D. Miller, "Femtosecond Time-Resolved Photoemission Study of Hot Electron Relaxation at the GaAs(100) Surface," Chem. Phys. 205, 91 (1996).

81.         E. Ettedgui, H. Razafitrimo, Y. Gao, and B.R. Hsieh, "Schottky Barrier Formation at the Ca/Poly(p-phenylene vinylene) Interface and its Role in Tunneling at the Interface," Synth. Met. 78, 247 (1996).

82.         B.R. Hsieh, E. Ettedgui, K.T. Park, and Y. Gao, "The Surface Species of Poly(p-phenylene vinylene) and Their Effects on the Metal Interface Formation,"  Synth. Met. 78, 269 (1996)

83.         H. Razafitrimo, Y. Gao, and B.R. Hsieh, "A Layer-wise Topographic Study of a Polymeric Light Emitting Diode: Indium Tin Oxide/Poly(diphenyl phenylene vinylene)/Ag," Synth. Met. 79, 103 (1996)

84.         Y. Park, V. Choong, Y. Gao, B.R. Hsieh, and C.W. Tang "Work Function of Indium Tin Oxide Transparent Conductor Measured by Photoelectron Spectroscopy," Appl. Phys. Lett. 68, 2699 (1996).

85.         Y. Park, E. Ettedgui, V. Choong, Y. Gao, B.R. Hsieh, T. Wehrmeister, and K. Mullen, "Energy Level Bending and Alignment at the Interface between Ca and a Phenylene Vinylene Oligomer," Appl. Phys. Lett. 69, 1080 (1996).

86.         V. Choong, Y. Park, Y. Gao, T. Wehrmeister, K. Müllen, B.R. Hsieh, and C. W. Tang, "Dramatic Photoluminescence Quenching of Phenylene Vinylene Oligomer Thin Films upon Submonolayer Ca Deposition," Appl. Phys. Lett. 69, 1492 (1996).

87.         B.R. Hsieh, V. Choong, H. Razafitrimo, Y. Gao, H. Antoniadis, D. Roitman, W. A. Feld, "Light-Emitting Diodes Based on Poly(p-phenylene vinylenes)", Polym. Mater. Sci. Eng., 75, 323 (1996).

88.         H. Razafitrimo, B.R. Hsieh, T. Wehrmeister, K. Mullen, and Y. Gao, "Comparative Topographic Study of Differently Prepared Conjugated Polymer and Oligomer Films Using Scanning Tunneling Microscope," Polym. Preprints, 37(2), 581 (1996).

89.         V. Choong, Y. Park, B.R. Hsieh, C.W. Tang, T. Wehrmeister, K. Mullen, and Y. Gao, "Severe Photoluminescence Quenching of 1,4-bis[4-(3,5-di-tert-butylstyry)styryl]benzene upon Deposition of Submonolayer Ca," Polym. Preprints 37(2), 583 (1996).

90.         B.R. Hsieh, V. Choong, H. Razafitrimo, Y. Gao, H. Antoniadis, D. Roitman, and W.A. Feld, "Light Emitting Diodes Based on Poly(p-phenylene vinylene)," Proceeding of The Society for Imaging Science and Technology 49th Annual Conference, 401 (1996).

91.         H. Razafitrimo, B.R. Hsieh, and Y. Gao, "Imaging Surfaces of Thin Conjugated Polymer Films by Scanning Tunneling Microscope," Proceedings of Third Workshop on Industrial Applications of Scanned Probe Microscopy, Gaithersburg (1996).

92.         L.H. Guo, G.L. McLendon, H. Razafitrimo, and Y. Gao, "Photo-active and Electro-active Protein Films Prepared by Reconstitution with Metalloporphyrins Self-assembled on Gold," J. Mater. Chem. 6, 369-374 (1996).

93.         E. Ettedgui, H. Razafitrimo, B.R. Hsieh, W.A. Feld, M.W. Ruckman, and Y. Gao, "Near Edge X-ray Absorption Fine Structure Study of Poly(2,3-diphenylphenylene vinylene) Following the Deposition of Metal," in Photonics and Optoeletronics Polymers, edited by S.A. Jenekhe and K.J. Wynne,  408 (Am. Chem. Soc., Washington, DC. 1997).

94.         E. Ettedgui, B.R. Hsieh, and Y. Gao,  "Interface Formation of Metals and Poly(p-Phenylene Vinylene): Surface Species and Band Bending," Polym. Adv. Technol. 8, 408 (1997).

95.         C.C. Miller, S. Diol, C.A. Schmuttenmaer, J. Cao, D.A. Mantell, R.J.D. Miller, and Y. Gao, "Reverse surface photovoltaic effects in GaAs surface quantum wells," J. Phys. D30, 1416 (1997).

96.         V. Choong, Y. Park, Y. Gao, and B.R. Hsieh, "Quantum Molecular Quantum Mechanical Calculations of the Interface Formation between Al, Ca and Mg with Poly(Phenylene Vinylene) (PPV) Oligomers," J. Phys. D30, 1421 (1997).

97.         S. Diol, C.C. Miller, C.A. Schmuttenmaer, J. Cao, Y. Gao, D.A. Mantell, and R.J.D. Miller, "Photogenerated Hot Electron Dynamics at GaAs(100) Surfaces," J. Phys. D30, 1427 (1997).

98.         S. Xu, C.C. Miller, D.A. Mantell, R.J.D. Miller, and Y. Gao, "Time-Resolved Photoemission Spectroscopy Studies of Layered Compounds," J. Vac. Sci. Technol. A15, 1510 (1997).

99.         V. Choong, Y. Park, B.R. Hsieh, C.W. Tang, T. Wehrmeister, K. Mullen, and Y. Gao, "Effects of Metals on Luminescence of Organic Materials," J. Vac. Sci. Technol. A15, 1745 (1997).

100.     Y. Park, V. Choong, B.R. Hsieh, C.W. Tang, T. Wehrmeister, K. Mullen, and Y. Gao,  "Electron Spectroscopy Studies of Interface Formation Between Metal Electrodes and Luminescent Organic Materials," J. Vac. Sci. Technol. A15, 2574 (1997).

101.     S.A. Jenekhe, X. Zhang, X.L. Chen, V. Choong, J. Vitale, Y. Gao, and B.R. Hsieh, "Finite Size Effects on Electroluminescence of Nanoscale Semiconducting Polymer Heterojunctions," Chem. Mat. 9, 409 (1997).

102.     V. Choong, Y. Park, B.R. Hsieh, and Y. Gao, "Radiation Induced Photoluminescence Quenching of Phenylene Vinylene Oligomer Thin Films," Phys. Rev. B55, 15460 (1997).

103.     Y. Park, V. Choong, B.R. Hsieh, C.W. Tang, and Y. Gao, "Gap-State Induced Photoluminescence Quenching of Phenylene Vinylene Oligomer and its Recovery by Oxidation," Phys. Rev. Lett. 78, 3955 (1997).

104.     J. Cao, Y. Gao, R.J.D. Miller, H. Elsayed-Ali, and D.A. Mantell, "Femtosecond Photoemission Study of Ultrafast Electron Dynamics on Cu(100)," Phys. Rev. B56, 1099 (1997).

105.     V. Choong, Y. Park, N, Shivaparan, C.W. Tang, and Y. Gao, "Deposition Induced Photoluminescence Quenching of Tris-(8-Hydroxyquinoline) Aluminum," Appl. Phys. Lett. 71, 1005 (1997).

106.     W.C. Wan, H. Antoniadis, V.-E. Choong, H. Razafitrimo, Y. Gao, W.A. Feld, and B.R. Hsieh, "Halogen Precursor Route to Poly(2,3-diphenyl-p-phenylene vinylene) (DP-PPV): Synthesis, Photoluminescence, Electroluminescence and Photoconductivity," Macromolecules 30, 6567 (1997).

107.     S. Xu, C.C. Miller, Y. Gao, D.A. Mantell, M.G. Mason, A.A. Muenter, B.A. Parkinson, and R.J.D. Miller, "Ultrafast Electron Dynamics in Two Dimensional Layered Systems: Two-Photon Photoemission Studies of SnS2," Chem. Phys. Lett. 272, 209 (1997).

108.     T.P. Nguyen, S. Lefrant, S. deVos, and Y. Gao, "Interfacial Reactions in Poly (phenylene vinylene)-Metal," Synth. Met. 84, 659 (1997).

109.     V.-E. Choong, Y. Park,  B.R. Hsieh, C.W. Tang, and Y. Gao, "Interfaces in Organic Light Emitting Devices: Quenching of luminescence," in Organic Light-Emitting Materials and Devices, Z.H. Kafafi, Ed., Procedings of SPIE Vol. 3148, 274 (1997).

110.     V.-E. Choong, Y. Park, B.R. Hsieh, C.W. Tang, and Y. Gao, "Effects of Metals on Luminescence of Organic Light Emitting Materials," Polymer Preprints 38, 392 (1997).

111.     H.G. Lee, S. Kim, C. Hwang, V. Choong, Y. Park, Y. Gao, and B.R. Hsieh, "A Study of Poly(p-phenylenevinylene) and its Derivatives Using X-ray Photoelectron                                       Spectroscopy," J. Appl. Phys. 82, 4962 (1997).

112.     V.-E. Choong, Y. Park, Y. Gao, B.R. Hsieh, and C.W. Tang, "Metal Induced Photoluminescence Quenching of a Phenylene Vinylene Oligomer and Its Recovery," Macromolecular Symposia, 125, 83 (1998).

113.     B.R. Hsieh, W.C. Wan, Y. Yu, Y. Gao, T.E. Goodwin, S.A. Gonzalez, and W.A. Feld, "Synthesis of Highly Phenylated Poly(p-phenylenevinylenes) via a Chlorine Precursor Route," Macromol. 31, 631 (1998).

114.     W.C. Wan, Y. Gao, T.E. Goodwin, S.A. Gonzalez, W.A. Feld, and B.R. Hsieh, "Phenylated Poly(p-phenylene vinylenes) Prepared via the Chlorine Precursor Route (CPR)," Macromolecular Symposia, 125, 205 (1998).

115.     V. Choong, Y. Park, B.R. Hsieh, and Y. Gao, "Interface Formation in Organic Semiconductor Devices," in Electrical and Optical polymer Systems: Fundamentals, Methods, and Applications, edited by D. L. Wise, G. Wnek, D. J. Trantolo, and T. M. Cooper,   (Marcel Dekker, New York, in press).

116.     Y. Park, V. Choong, Y. Gao, B.R. Hsieh, C.W. Tang, "Interface Formation of PPV Oligomer with Ca: a Model System for Metal/Polymer Interface," in Polymer-Solid Interfaces: from Model to Real Systems, J.J. Pireaux, J. Delhalle, and P. Rudolf, Eds., 147 (PUN, Namur, Belgium, 1998).

117.     Y. Gao, "Interface Formation in Polymeric Light Emitting Diodes: a Review of Modeling and Surface Analytical Measurements," in Polymer-Solid Interfaces: from Model to Real Systems, J.J. Pireaux, J. Delhalle, and P. Rudolf, Eds., 365 (PUN, Namur, Belgium, 1998).

118.     V.-E. Choong, Y. Park, Y. Gao, B.R. Hsieh, and C. W. Tang, "Luminescence of Organic Materials: Metal Induced Quenching and Its Revival," Proceeding of The Society for Imaging Science and Technology 50th Annual Conference, in press.

119.     E.W. Forsythe, D.C. Morton, C.W. Tang, and Y. Gao, "Trap States of Tris-8-(hydroxyquinoline) Aluminum and Naphthyl-Substituted Benzidine Derivative Using Thermally Stimulated Luminescence," Proceeding of Materials Research Society Symposium, Boston, in press.

120.     C. Hochfilzer, T. Jost, A. Niko, W. Graupner, G. Leising, C. W. Tang, E. Forsythe, Y. Gao, "Internal Field Distribution in Organic Light Emitting Devices With Double Layer Structure," Materials Research Society Symposium Proceedings 488, 121 (1998).

121.     V.-E. Choong, Y. Park, and Y. Gao, M.G. Mason, and C.W. Tang, "Photoluminesence Quenching of Alq3 by Metal Deposition: A Surface Analytical Investigation," J. Vac. Sci. Technol. A16, 1838 (1998).

122.     V.-E. Choong, M.G. Mason, C.W. Tang and Y. Gao, "Investigation of the Interface Formation Between Calcium and Tris-(8-hydroxy quinoline) aluminum," Appl. Phys. Lett. 72, 2689 (1998).

123.     Ioannidis, E.W. Forsythe, Yongli Gao, M.W. Wu, and E.M. Conwell, “Current-Voltage Characteristics of Organic Light Emitting Diodes,” Appl. Phys. Lett . 72, 3038 (1998).

124.     E.W. Forsythe, D.C. Morton, C.W. Tang, and Yongli Gao, “Trap States of tris-8-(hydroxyquinoline) Aluminum and Naphthyl-Substituted Benzidine Derivative Using Thermally Stimulated Luminescence,” Appl. Phys. Lett. 73, 1457 (1998).

125.     C. Hochfilzer, G. Leising, Y. Gao, E. Forsythe, and C. W. Tang, "Emission Process in Bi-Layer Organic Light Emitting Devices," Appl. Phys. Lett., 73, 2254 (1998).

126.     J. Cao, H.E. Elsayed-Ali, R.J.D. Miller, D.A. Mantell, and Y. Gao, “Femtosecond Photoemission Study of Ultrafast Electron Dynamics in Single Crystal Au(111) Films,” Phys. Rev. B58, 10948 (1998).

127.     Y. Gao, “Surface Analytical Studies of Interface Formation in Organic Light Emitting Devices,” Acc. Chem. Res. 32, 247 (1999).

128.     E.W. Forsythe, D.C. Morton, T.Q. Le, C.W. Tang, and Yongli Gao, “Trap States in Doped tris-8-(hydroxyquinoline) Using Thermally Stimulated Luminescence,” SPIE Proc. 3473, 23 (1999).

129.     S. Xu, S.J. Diol, A. Makinen, L. Rothberg, Yongli Gao, M.G. Mason, A.A. Muenter, D.A. Mantell, and R.J.D. Miller, “Super-Radiant Decay in Two-Dimensional Layered Semiconductors,” Ultrafast Phenomena XI, 292 (Springer-Verlag, Berlin, 1999).

130.     Quoc Toan Le, V.-E. Choong, M.G. Mason, C.W. Tang, and Yongli Gao, “Photoemission Study of Interfaces in Organic Light-Emitting Diodes,” Synth. Met. 102, 1014 (1999).

131.     F.M. Avendano, E.W. Forsythe, Yongli Gao, and C.W. Tang “The Growth Modes of NPB on Indium Tin Oxide,” Synth. Met. 102, 910 (1999).

132.     N.J. Watkins, G.W. Wicks, and Yongli Gao, "Oxidation study of GaN using x-ray photoemission spectroscopy," Appl. Phys. Lett. 75, 2602 (1999).

133.     Quoc Toan Le, F. Nuesch, L. J. Rothberg, E. W. Forsythe, and Yongli Gao, "Photoemission Study of Phenyl-Diamine Treated Indium Tin Oxide Interface," Appl. Phys. Lett. 75, 1357 (1999).

134.     Quoc Toan Le, M. G. Mason, Li Yan, V.-E. Choong, E. W. Forsythe, C. W. Tang, and Yongli Gao, "Interface Formation between Al and Ca with Tis-(8-hydroxyquinoline) Aluminum," SPIE Proc. 3623, 64 (1999).

135.     E.W. Forsythe, D.C. Morton, T.Q. Le, C.W. Tang, and Yongli Gao, "Energy Level Alignment and Trap States in Doped Tris-8-(hydroxyquinoline) Using Thermally Stimulated Luminescence," SPIE Proc. 3623, 13 (1999).

136.     F. Nuesch, L. J. Rothberg, E. W. Forsythe, Quoc Toan Le, and Yongli Gao, "A Photoelectron Spectroscopy Study on the Indium Tin Oxide Treatment by Acids and Bases," Appl. Phys. Lett. 74, 880 (1999).

137.     Quoc Toan Le, F. M. Avendano, E. W. Forsythe, Li Yan, C. W. Tang, and Yongli Gao, "X-Ray Photoelectron Spectroscopy and Atomic Force Microscopy Investigation of Stability Mechanism of Tris-(8-hydroxyquinoline) Aluminum Based Light-Emitting Diodes," J. Vac. Sci. Tech. A17, 2314 (1999).

138.     E.W. Forsythe, Yongli Gao, L.G. Provost, and G.S. Tompa, “Photoemission Spectroscopy Analysis of ZnO:Ga Films for Display Applications,” J. Vac. Sci Tech. A17, 1761 (1999).

139.     A.J. Makinen, S. Xu, Z. Zhang, S.J. Diol, Y. Gao, M.G. Mason, A.A. Muenter, D.A. Mantell, and A.R. Melnyk, "Morphology and Excited State Dynamics in Thin Organic Molecular Films Probed by Femtosecond Time-Resolved Photoemission Spectroscopy," J. Vac. Sci. Tech. A17, 2329 (1999).

140.     E.W. Forsythe, V.-E. Choong, C.W. Tang, and Yongli Gao, "Interface Analysis of Naphthyl-Substituted Benzidine Derivative and Tris-8-(hydroxyquinoline) Aluminum Using Ultra-Violet and X-Ray Photoemission Spectroscopy,” J. Vac. Sci. Tech. A17, 3429 (1999).

141.     A.J. Makinen, S. Xu, Z. Zhang, S.J. Diol, Yongli Gao, M.G. Mason, A.A. Muenter, D.A. Mantell, and A.R. Melnyk, "The Effect of Disorder on Excited State Dynamics in Organic Molecular Films," Appl. Phys. Lett. 74, 1296 (1999).

142.     A.J. Makinen, A.R. Melnyk, S. Schoemann, R.L. Headrick, and Yongli Gao, "Effect of Crystalline Domain Size on the Photophysical Properties of Thin Organic Molecular Films," Phys. Rev. B60, 14683  (1999).

143.     Quoc Toan Le, Li Yan, Yongli Gao, M. G. Mason, D. J. Giesen, and C. W. Tang, "Photoemission Study of Al/tris-(8-hydroxyquinoline) Aluminum and Al/LiF/tris-(8-hydroxyquinoline) Aluminum Interfaces," J. Appl. Phys. 87, 375 (2000).

144.     E.W. Forsythe, M. Abkowitz, and Yongli Gao, “Tuning the Carrier Emission and Growth Modes,” J. of Phys. Chem. B104, 3948 (2000).

145.     E.W. Forsythe, M.A. Abkowitz, and Yongli Gao, “The Influence of Copper Phthalocynanine on the Charge Injection and Growth Modes for Organic Light Emitting Diodes,” J. of Vac. Sci. Tech., A18, 1869 (2000).

146.     Y. Gao, T. Miyamae, H. Mekaru, and T. Urisu, "Scanning Tunneling Microscopy Study of Surface Morphology of Si(111) after Synchrotron Radiation Stimulated Desorption of SiO2," J. of Vac. Sci. Tech., A18, 1153 (2000).

147.     E.W. Forsythe,  M. Abkowitz,  C.W. Tang, and Yongli Gao, "Growth Modes and Hole Injection Characteristics of Organic Films on Induim Tin Oxide,"  in Photoinduced Charge Transfer, Ed. L. Rothberg (World Scietific, New York, 2000).

148.     A.J. Makinen, S. Schoemann, Y. Gao, M.G. Mason, A.A. Muenter, D.A. Mantell, A.R. Melnyk, and R.L. Headrick, "Femtosecond Excited State Dynamics in Organic Molecular Films," in Photoinduced Charge Transfer, Ed. L. Rothberg (World Scietific, New York, 2000).

149.     Q.T. Le, F. Nuesch, L.J. Rothberg, E.W. Forsythe, and Y. Gao, "Characterization of Treated Indium Tin Oxide Surface and Interface Formation with Phenyl Diamine,”  SPIE Proc. 3797, 301 (2000).

150.     Q.T. Le, E.W. Forsythe, F. Nuesch, L. Rothberg, Li Yan, and Yongli Gao, "Interface Formation between NPB and Processed Indium-Tin-Oxide," Thin Solid Films, 363, 42 (2000).

151.     Y. Gao, H. Mekaru, T. Miyamae, and T. Urisu, "Scanning Tunneling Microscopy Study of Si(111) Surface Morphology after Removal of SiO2 by Synchrotron Radiation Illumination," Appl. Phys. Lett. 76, 1392 (2000).

152.     A.J. Mäkinen, S. Schoemann, Yongli Gao, M.G. Mason, A.A. Muenter, and A.R. Melnyk, "Femtosecond Photoemission Study of Excited State Dynamics in Organic Photoreceptors," SPIE Proc. 3940, 65, (2001).

153.     N. Koch, R. Pairleitner, Q.T. Le, E.W. Forsythe, Y. Gao, and G. Leising, “Photoemission Spectroscopic Investigation on the Interface Formation of a Ladder-Type Poly(para-phenylene) with Aluminum”, Appl. Phys. Lett. 76, 3738, (2000).

154.     F. Nuesch, E.W. Forsythe, Q.T. Le, Y. Gao, and L.J. Rothberg, “Importance of Indium Tin Oxide Surface Acido Basicity for Charge Injection into Organic Materials Based Light Emitting Diodes”, J. Appl. Phys., 87, 7973, (2000).

155.     E.W. Forsythe and Y. Gao, “Interfaces in Organic Light Emitting Devices”, Book Chapter Review for “Handbook of Surfaces and Interfaces of Materials”, Ed. H.S. Nalwa, 286 (Academic Press, New York, 2001).

156.     M.G. Mason, C.W. Tang, L,-S. Hung, P. Raychaudhuri, J. Madathil, D.J. Giesen, L. Yan, Q.T. Le, Y. Gao, S.-T. Lee, L.S. Liao, L.F. Cheng, W.R. Salaneck, D.A. dos Santos, and J.L. Brédas, "The Interaction of Tris-(8-hydroxyquinoline) aluminum with Reactive Metals and the Role of LiF," J. of Appl. Phys. 89, 2756 (2001).

157.     V.K. Gupta, M.W. Koch, N.J. Watkins, Y. Gao, G.W. Wicks, "Molecular Beam Epitaxial Growth of BgaAs Ternary Compounds," J. Elec. Mat. 29, 1387 (2000).

158.     Li Yan, Yongli Gao, M.G. Mason, and C.W. Tang, "Photoemission Study of Energy Alignment at the Metal/Alq3 Interfaces," Appl. Surf. Sci. 175-176, 412 (2001).

159.     L. Yan, M.G. Mason, C.W. Tang, and Yongli Gao, "Energy Level Alignment in Metal/Organic Interfaces: Ca/Alq3 and Al/Alq3," SPIE Proc. 4105, 84 (2001).

160.     A.J. Mäkinen, S. Schoemann, Yongli Gao, M.G. Mason,  A.A. Muenter, and A.R. Melnyk, "Femtosecond Photoemission Study of Relaxation and Interface Charge Transfer Dynamics in  Organic Photoreceptors," in Conjugated Polymer and Molecular Interfaces: Science and Technology for Photonic and Optoelectronic Applications, Ed. W.R. Salaneck, K. Seki, A. Kahn, and J. J. Pireaux (Marcel Dekker, New York, 2001).

161.     Li Yan, Yongli Gao, M. G. Mason, and C.W. Tang, "Energy Level Alignment at Metal/Alq3 Interfaces Investigated by Photoemission Methods," MRS Proc. 660, JJ8.36 (2001).

162.     N.J. Watkins ,Quoc Toan Le, S. Zorba, Li Yan, and Yongli Gao, "Interface Formation in Pentacene Based Thin Film Transistors: an Electronic and Morphological Study," MRS Proc. 660, JJ7.3 (2001).

163.     Serkan Zorba, Q. Toan Le, Neil J. Watkins, Li Yan, and Yongli Gao, "Current-Voltage Measurements as a Function of Applied Tip Force on Pentacene by Conducting Probe Microscopy," MRS Proc. 660, JJ10.3 (2001).

164.     Y. Nonogaki, Y. Gao, H. Mekaru, and T. Urisu, "Nanostructure Formation on Si(111) Surface Assisted by Synchrotron Radiation Illumination -Characterization by Scanning Tunneling Microscopy," J. Elec. Spec. Relat. Phen. 119, 241 (2001).

165.     Y. Nonogaki, Y. Gao, H. Mekaru, T. Miyamae, and T. Urisu,  “STM observation of surface nanostructures on Si(111) formed after synchrotron radiation stimulated cleaning,”　Transactions MRS Japan, 26, 751 (2001).

166.     Li Yan, N. J. Watkins, S, Zorba, Yongli Gao, and C. W. Tang,  "Direct Observation of Fermi Level Pinning in Cs Doped CuPc Film," Appl. Phys. Lett. 79, 4148 (2001).

167.     N. J. Watkins, Quoc Toan Le, S. Zorba, Li Yan, Yongli Gao, S. F. Nelson, C. S. Kuo, and T. N. Jackson, "Photoemission Characterization of Interfaces between Au and Pentacene," SPIE Proc. 4466, 1 (2001).

168.     Serkan Zorba, Quoc Toan Le, Neil J. Watkins, Li Yan, and Yongli Gao, "Morphology and Current-Voltage Measurement Studies of Pentacene by Atomic Force Microscopy," J. Nanosci. Nanotech. 1, 317 (2001).

169.     L. Yan and Y. Gao, "Interfaces in Organic Light-Emitting Diodes," Thin Solid Films 417, 101 (2002).

170.     N. J. Watkins, Li Yan, and Yongli Gao, "Symmetry of Interfaces between Pentacene and Metals," Appl. Phys. Lett. 80, 4384 (2002).

171.     Li Yan, N. J. Watkins, S. Zorba, Yongli Gao, and C. W. Tang, "Thermodynamic Equilibrium and Metal-Organic Interface Dipole," Appl. Phys. Lett. 81, 2752 (2002).

172.     N.J. Watkins, S. Zorba, L. Yan, and Y. Gao, “A Photoemission Spectroscopic Study of the Interface Formation in Organic Thin Film Transistors,” MRS Proc. 708, BB2.3 (2002).

173.     Serkan Zorba, Li Yan, Neil J. Watkins, and Yongli Gao, “Kinetic Roughening Study of Perylene on Glass and Au Substrates,” Appl. Phys. Lett. 81, 5195 (2002).

174.     Akinori Tanaka, Tazumi Nagasawa, Yuitsu Takeda, Neil J. Watkins and Yongli Gao, “Time-Resolved Two-Photon Photoemission Study of Dodecanethiolate-Passivated Ag Nanoparticles,” J. Phys. Soc. Japan 71, 3098 (2002).

175.     N. J. Watkins, Li Yan, S. Zorba, Yongli Gao, and C. W. Tang, “Evidence of Electron and Hole Transfer in Metal/CuPc Interfaces,” SPIE Proc. 4800, 248 (2002).

176.     Serkan Zorba, Li Yan, Neil J. Watkins, and Yongli Gao, “Growth Front Kinetics of Perylene on Glass and Au Substrates,” SPIE Proc. 4801, 136 (2003).

177.     N. J. Watkins, Li Yan, S. Zorba, and Yongli Gao, “Photoemission spectroscopy study of the interface formation in organic thin film transistors,” SPIE Proc. 4800, 192 (2003).

178.     Li Yan, N.J. Watkins, C. W. Tang, and Yongli Gao, “Fermi Level Pinning in Cs Doped CuPc,” Synth. Met. 137, 1037 (2003).

179.     Serkan Zorba, Li Yan, Neil J. Watkins, and Yongli Gao, “Kinetic Roughening Study of Perylene on Glass and Au Substrates,” MRS Proc., in press.

180.     Xiaowei Teng, Donald Black, Neil J. Watkins, Yongli Gao, and Hong Yang, “Platinum-Maghemite Core-Shell Nanoparticles Using a Sequential Synthesis,” Nano Let. 3, 261 (2003).

181.     A. Tanaka, N.J. Watkins, and Yongli Gao, “Hot-Electron Relaxation in the Layered Semiconductor 2H-MoS2 Studied by Time-Resolved Two-Photon Photoemission Spectroscopy,” Phys. Rev. B67, 113315 (2003).

182.     N.J. Watkins and Y. Gao, “Vacuum level alignment of pentacene on LiF/Au,” J. Appl. Phys. 94, 1289 (2003).

183.     Y. Gao and Li Yan, “Cs Doping and Energy Level Shift in CuPc,” Chem. Phys. Lett. 380, 451 (2003).

184.     N.J. Watkins and Y. Gao, “Interface Formation and Energy Level Alignment of Pentacene on SiO2,” J. Appl. Phys. 94, 5782 (2003).

185.     Serkan Zorba and Yongli Gao, “Organic Nanofilm Growth,” in Encyclopedia of Nanoscience and Nanotechnology, Ed. H.S. Nalwa, Vol 8, 271 (2004).

186.     N.J. Watkins, S. Zorba, and Y. Gao, “Interface Formation of Pentacene with Al2O3,” J. Appl. Phys. 96, 425 (2004).

187.     Y. Gao, “Interface Electronic Structure and Organic Photovoltaic Devices,” in Organic Photovoltaics, Ed. S. Sun and N. Sariciftci, 421 (Taylor and Francis, New York, 2004).

188.     Y. Gao and L. Yan, “Energy Level Shift in CuPc,” in Proc. Int. Conf. Synth. Metals 2004, (University of Wollongong, 2004).

189.     L. Yan, N.J. Watkins, S. Zorba, and Y. Gao, “Metal-Organic Interface Dipole and Thermodynamic Equilibrium,” in Proc. Int. Conf. Synth. Metals 2004, (University of Wollongong, 2004).

190.     N.J. Watkins and Y. Gao, “Energy Level Alignment of Pentacene and Dielectric Materials,” in Proc. Int. Conf. Synth. Metals 2004, (University of Wollongong, 2004).

191.     S. Zorba and Y. Gao, “Growth Kinetics of Ordered Pentacene Thin Films,” in Proc. Int. Conf. Synth. Metals 2004, (University of Wollongong, 2004).

192.     R. Krishnan, Q. Xie, J. Kulik, X.D. Wang, S. Lu, M. Molinari, Y. Gao, T.D. Krauss, P.M. Fauchet, “Effect of Oxidation on Charge Localization and Transport in a Single Layer of Silicon Nanocrystals,” J. Appl. Phys. 96, 964 (2004).

193.     S. Zorba and Y. Gao, “Feasibility of Static Induction Transistor with Organic Semiconductors,” Appl. Phys. Lett. 86, 193508 (2005).

194.     H. Ding and Y. Gao, “Electronic Structure of Cs Doping in Alq,” Appl. Phys. Lett. 86, 213508 (2005).

195.     H. Ding and Y. Gao, “Reversal of Doping Induced Energy Level Shift: Au on Cs-doped Alq,” Appl. Phys. Lett. 87, 851918 (2005).

196.     A. Tanaka, L. Yan, N.J. Watkins, Y. Gao, “Femtosecond Time-resolved Two-photon Photoemission Study of Organic Semiconductor Copper Phthalocyanine Film,” J. Elec. Spec. Relat. Phen. 144, 327 (2005).

197.     S. Pyo, L.P. Ma, J. He, Q.F. Xu, Y. Yang, and Y. Gao, “Experimental study on thickness-related electrical characteristics in organic/metal-nanocluster/organic systems,” J. Appl. Phys. 98, 54303 (2005).

198.     B.H. Hamadani, H. Ding, Y. Gao, and D. Natelson, “Doping dependent chargeinjection in organic field-effect transistors,” Phys. Rev. B72, 235302 (2005).

199.     H. Ding and Y. Gao, “Alkali Metal Doping and Energy Level Shift in Organic Semiconductor Surfaces,” Appl. Surf. Sci. 252, 3943 (2006).

200.     H. Ding and Y. Gao, “Reversal of Doping Induced Energy Level Shift in Organic Semiconductors,” International J. Nanoscience, in press.

201.     S. Zorba, Y. Shapir, and Y. Gao, "Fractal-mound growth of pentacene thin films," Phys. Rev. B74, 245410 (2006).

202.     N. J. Watkins, A. J. Mäkinen, Y. Gao, M. Uchida, and Z. H. Kafafi, “Direct observation of the evolution of occupied and unoccupied energy levels of two silole derivatives at their interfaces with magnesium,” J. Appl. Phys. 100, 103706 (2006).

203.     H. Ding, S. Zorba, Y. Gao, L.P. Ma, and Y. Yang, “Photoemission study of tris(8-hydroxyquinoline) aluminum/aluminum oxide/tris(8-hydroxyquinoline) aluminum interface,” J. Appl. Phys., in press. 

 

 

Home  CV  Research  Teaching  Publications  Group